621.315.592 L 54 Lenka, T. R. Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/ (Al, In) N/GaN-based HEMT [Текст] / T. R. Lenka, aut. A. K. Panda // Физика и техника полупроводников. - 2011. - Т. 45, вып. 9. - С. 1258-1265 : ил. - Библиогр.: с. 1265 (21 назв. ) . - ISSN 0015-3222
Рубрики: Энергетика Полупроводниковые материалы и изделия Кл.слова (ненормированные): электронные транзисторы -- HEMT -- микроволны -- наноразмерные слои Аннотация: A new AlGaN/GaN-based high electron mobility transistor (HEMT) is proposed and its microwave characteristics are discussed by introducing a nanoscale AlN or InN layer to study the potential improvement in their high frequency performance. The 2DEG transport mechanism including various subband calculations for both (Al, In) N-based HEMTs are also discussed in the paper. Apart from direct current characteristics of the proposed HEMT, various microwave parameters such as transconductance, unit current gain (h[21]=1) cut-off frequency (f[t]), high power-gain frequency (f[max]). Masons available/stable gain and masons unilateral gain are also discussed for both devices to understand its suitable deployment in microwave frequency range. Перейти: http://journals.ioffe.ru/ftp/2011/09/p1258-1265.pd Доп.точки доступа: Panda, A. K. |